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MOSFET N-CH 525V 12A TO220SIS
| Part | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 30 V | 1350 pF | TO-220-3 Full Pack | 150 °C | 12 A | N-Channel | MOSFET (Metal Oxide) | 10 V | TO-220SIS | Through Hole | 580 mOhm | 525 V | 25 nC | 45 W |