SSM6J212FE,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A ES6

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J212FE,LF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	14.1 nC
Input Capacitance (Ciss) (Max) @ Vds	970 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	40.7 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Mounting Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Technology	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage SSM6J212FE,LF	20 V	8 V	SOT-563 SOT-666	Surface Mount	500 mW	970 pF	14.1 nC	4 A	150 °C	MOSFET (Metal Oxide)	P-Channel	40.7 mOhm	ES6	1 V	1.5 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 4A (Ta) 500mW (Ta) Surface Mount ES6

Technical documentation and resources