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MOSFET P-CH 20V 4A ES6
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Package / Case | Mounting Type | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Technology | FET Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | 8 V | SOT-563 SOT-666 | Surface Mount | 500 mW | 970 pF | 14.1 nC | 4 A | 150 °C | MOSFET (Metal Oxide) | P-Channel | 40.7 mOhm | ES6 | 1 V | 1.5 V 4.5 V |