SIGC11T60SNCX1SA1

Obsolete

Infineon Technologies

IGBT 3 CHIP 600V WAFER

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT 3 CHIP 600V WAFER

Technical Specifications

Parameters and characteristics for this part

Specification	SIGC11T60SNCX1SA1

Current - Collector Pulsed (Icm)	30 A
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Die
Supplier Device Package	Die
Td (on/off) @ 25°C	28 ns, 198 ns
Test Condition	25 Ohm, 400 V, 10 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Test Condition	Td (on/off) @ 25°C	IGBT Type	Supplier Device Package	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Package / Case	Mounting Type
Infineon Technologies SIGC11T60SNCX1SA1	10 A 15 V 25 Ohm 400 V	28 ns 198 ns	NPT	Die	30 A	600 V	-55 °C	150 °C	2.4 V	Die	Surface Mount
Infineon Technologies SIGC11T60SNCX1SA2	10 A 15 V 25 Ohm 400 V	28 ns 198 ns	NPT	Die	30 A	600 V	-55 °C	150 °C	2.4 V	Die	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 600 V 10 A Surface Mount Die

Technical documentation and resources