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STP80N1K1K6 - TO-220-3 Type A

STP80N1K1K6

Active
STMicroelectronics

N-CHANNEL 800 V, 1.0 OHM TYP., 5 A MDMESH K6 POWER MOSFET IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetAN2842+15
STP80N1K1K6 - TO-220-3 Type A

STP80N1K1K6

Active
STMicroelectronics

N-CHANNEL 800 V, 1.0 OHM TYP., 5 A MDMESH K6 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheetAN2842+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP80N1K1K6
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.7 nC
Input Capacitance (Ciss) (Max) @ Vds300 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]62 W
Rds On (Max) @ Id, Vgs [Max]1.1 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.42
10$ 1.22
100$ 1.01
500$ 0.87
1000$ 0.80
2000$ 0.75
5000$ 0.73
NewarkEach 1$ 1.69
10$ 1.16
100$ 1.04
500$ 0.96
1000$ 0.93
2500$ 0.89
5000$ 0.87

Description

General part information

STP80N1K1K6 Series

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.