STP80N1K1K6 Series

N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET in a TO-220 package

Catalog

N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET in a TO-220 package

Part	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	Mounting Type	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STP80N1K1K6	62 W	5.7 nC	TO-220	MOSFET (Metal Oxide)	Through Hole	N-Channel	30 V	800 V	TO-220-3	1.1 Ohm	4 V	-55 °C	150 °C	10 V	300 pF	5 A

Catalog

N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET in a TO-220 package

Description

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.