SCTW40N120G2V
ActiveSILICON CARBIDE POWER MOSFET 1200 V, 62 MOHM TYP., 36 A IN AN HIP247 PACKAGE
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SCTW40N120G2V
ActiveSILICON CARBIDE POWER MOSFET 1200 V, 62 MOHM TYP., 36 A IN AN HIP247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCTW40N120G2V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 61 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 278 W |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | HiP247™ |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 4.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCTW40N120G2V Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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