SCTW40N120G2V Series

Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

Catalog

Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max) [Min]	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id
STMicroelectronics SCTW40N120G2V	-55 °C	200 C	TO-247-3	100 mOhm	278 W	-10 V	22 V	18 V	36 A	HiP247™	1200 V	N-Channel	61 nC	1233 pF	Through Hole	4.9 V

Catalog

Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.