DMTH62M8SPS-13
ActiveDiodes Inc
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH62M8SPS-13
ActiveDiodes Inc
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH62M8SPS-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 95.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4556 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) [Max] | 3.2 W |
| Rds On (Max) @ Id, Vgs [Max] | 2.8 mOhm |
| Supplier Device Package | PowerDI5060-8 (Type K) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.55 | |
| 5000 | $ 0.52 | |||
| 12500 | $ 0.51 | |||
Description
General part information
DMTH62M8SPS Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources