DMTH62M8SPS Series

60V +175°C N-Channel Enhancement Mode MOSFET

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	Power Dissipation (Max) [Max]
Diodes Inc DMTH62M8SPS-13	20 V	8-PowerTDFN	N-Channel	100 A	Surface Mount	10 V	60 V	2.8 mOhm	-55 °C	175 ░C	4556 pF	4 V	95.4 nC	PowerDI5060-8 (Type K)	MOSFET (Metal Oxide)	3.2 W

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Thermally Efficient Package – Cooler Running Applications

• High-Conversion Efficiency

• Low RDS(ON) – Minimizes On-State Losses

• <1.1mm Package Profile – Ideal for Thin Applications

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.