IDP20C65D2XKSA1
ActiveInfineon Technologies
650 V, 20 A RAPID 2 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-220 PACKAGE
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IDP20C65D2XKSA1
ActiveInfineon Technologies
650 V, 20 A RAPID 2 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-220 PACKAGE
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IDP20C65D2XKSA1 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-3 |
| Reverse Recovery Time (trr) | 28 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | PG-TO220-3-1 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.17 | |
| 50 | $ 0.94 | |||
| 100 | $ 0.74 | |||
| 500 | $ 0.63 | |||
| 1000 | $ 0.62 | |||
Description
General part information
IDP20C65 Series
Rapid 2switching 650 V, 20 A emitter controlledpower silicon diodesin common cathode configuration and in a TO-220 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.
Documents
Technical documentation and resources