Beta
⌘K
650 V, 20 A RAPID 2 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-220 PACKAGE
| Part | Technology | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Reverse Recovery Time (trr) | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Diode Configuration | Package / Case | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Standard | 10 A | 2.2 V | Through Hole | 28 ns | PG-TO220-3-1 | 200 mA 500 ns | 650 V | 1 Pair Common Cathode | TO-220-3 | 40 µA | -40 °C | 175 ░C |