STI34N65M5

Obsolete

STMicroelectronics

MOSFET N-CH 650V 28A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N-CH 650V 28A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STI34N65M5

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
STMicroelectronics STI34N65M5	25 V	TO-262-3 Full Pack I2PAK	2700 pF	Through Hole	28 A	-55 °C	150 °C	TO-281 (I2PAKFP)	62.5 nC	190 W	650 V	N-Channel	MOSFET (Metal Oxide)	5 V	10 V	110 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 28A (Tc) 190W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources