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MOSFET N-CH 650V 28A I2PAKFP
| Part | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | FET Type | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 25 V | TO-262-3 Full Pack I2PAK | 2700 pF | Through Hole | 28 A | -55 °C | 150 °C | TO-281 (I2PAKFP) | 62.5 nC | 190 W | 650 V | N-Channel | MOSFET (Metal Oxide) | 5 V | 10 V | 110 mOhm |