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ONSEMI NJW21194G

STGWT30H60DFB

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STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

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ONSEMI NJW21194G

STGWT30H60DFB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

Find alt

Description

General part information

STGWT30 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWT30H60DFB
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge149 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-3P-3, SC-65-3
Package NameTO-3P
Power - Max260 W
Reverse Recovery Time (trr)53 ns
Switching Energy (Off)293 µJ
Switching Energy (On)383 µJ
Td (off) @ 25°C146 ns
Td (on) @ 25°C37 ns
Test Condition Current30 A
Test Condition Resistance10 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2 V
Voltage - Collector Emitter Breakdown (Max)600 V

Pricing

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CAD

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