STGWT30H65FB

Obsolete

STMicroelectronics

IGBT 650V 30A 260W TO3PL

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STGWT30H65FB

Obsolete

STMicroelectronics

IGBT 650V 30A 260W TO3PL

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGWT30H65FB

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	149 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	260 W
Supplier Device Package	TO-3P
Td (on/off) @ 25°C	37 ns, 146 ns
Test Condition	15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

STGWT30H60DFB Series

Trench gate field-stop 600 V, 30 A high speed HB series IGBT

Part	Test Condition	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Switching Energy [custom]	Switching Energy [custom]	Mounting Type	Supplier Device Package	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Switching Energy	Td (on/off) @ 25°C
STMicroelectronics STGWT30H60DFB	10 Ohm 15 V 30 A 400 V	120 A	60 A	-55 °C	175 ░C	149 nC	53 ns	2 V	37 ns 146 ns	383 µJ	293 µJ	Through Hole	TO-3P	SC-65-3 TO-3P-3	600 V	Trench Field Stop	260 W
STMicroelectronics STGWT30H65FB	10 Ohm 15 V 30 A 400 V	120 A	30 A	-55 °C	175 ░C	149 nC		2 V	37 ns 146 ns			Through Hole	TO-3P	SC-65-3 TO-3P-3		Trench Field Stop	260 W	650 V
STMicroelectronics STGWT30V60F	10 Ohm 15 V 30 A 400 V	120 A	60 A	-55 °C	175 ░C	163 nC		2.3 V				Through Hole	TO-3P	SC-65-3 TO-3P-3	600 V	Trench Field Stop	260 W		233 µJ 383 µJ	45 ns 189 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.16
		30	$ 2.51
		120	$ 2.15

Description

General part information

STGWT30H60DFB Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources