IRF640NSTRRPBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 150 MOHM;

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Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 150 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF640NSTRRPBF

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1160 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs [Max]	150 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id
Infineon Technologies 64-0007	20 V	18 A	Through Hole	1160 pF	150 W	TO-220AB	-55 °C	175 ░C	10 V	TO-220-3	N-Channel	150 mOhm	200 V	MOSFET (Metal Oxide)	4 V
Infineon Technologies IRF640NSTRRPBF	20 V	18 A	Surface Mount	1160 pF	150 W	D2PAK	-55 °C	175 ░C	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	150 mOhm	200 V	MOSFET (Metal Oxide)	4 V
Infineon Technologies IRF640NLPBF	20 V	18 A	Through Hole	1160 pF	150 W	TO-262	-55 °C	175 ░C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	150 mOhm	200 V	MOSFET (Metal Oxide)	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 18A (Tc) 150W (Tc) Surface Mount D2PAK

Technical documentation and resources