IRF640 Series

Catalog

MOSFET N-CH 200V 18A TO220AB

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id
Infineon Technologies 64-0007	20 V	18 A	Through Hole	1160 pF	150 W	TO-220AB	-55 °C	175 ░C	10 V	TO-220-3	N-Channel	150 mOhm	200 V	MOSFET (Metal Oxide)	4 V
Infineon Technologies IRF640NSTRRPBF	20 V	18 A	Surface Mount	1160 pF	150 W	D2PAK	-55 °C	175 ░C	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	150 mOhm	200 V	MOSFET (Metal Oxide)	4 V
Infineon Technologies IRF640NLPBF	20 V	18 A	Through Hole	1160 pF	150 W	TO-262	-55 °C	175 ░C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	150 mOhm	200 V	MOSFET (Metal Oxide)	4 V