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IPD65R400CEAUMA1

IPD65R400CEAUMA1

NRND
INFINEON

MOSFET, N-CH, 650V, 15.1A, TO-252

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IPD65R400CEAUMA1

IPD65R400CEAUMA1

NRND
INFINEON

MOSFET, N-CH, 650V, 15.1A, TO-252

Find alt

Description

General part information

CoolMOS CE Series

N-Channel 650 V 15.1A (Tc) 118W (Tc) Surface Mount PG-TO252-3

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD65R400CEAUMA1
Current - Continuous Drain (Id) (Tc)15.1 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)39 nC
Input Capacitance (Ciss) (Max)710 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)118 W
Rds On (Max)400 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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