CoolMOS CE Series

Manufacturer: INFINEON

Catalog

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; TO-220 FULLPAK PACKAGE; 500 MOHM; PRICE/PERFORMANCE

Part	Current - Continuous Drain (Id) (Tc)	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Rds On (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Technology	FET Type	Power Dissipation (Max)	Package Name
INFINEON IPA50R500CEXKSA2	5.4 A	TO-220-3 Full Pack	Through Hole	433 pF	13 V	500 V	3.5 V	500 mOhm	20 V	-40 °C	150 °C	18.7 nC	MOSFET (Metal Oxide)	N-Channel	28 W	PG-TO220-3-FP
INFINEON IPB50R140CPATMA1	23 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	2540 pF	10 V	550 V	3.5 V	140 mOhm	20 V	-55 °C	150 °C	64 nC	MOSFET (Metal Oxide)	N-Channel	192 W	PG-TO263-3-2
INFINEON IPD50R800CEAUMA1	7.6 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	280 pF	13 V	500 V	3.5 V	800 mOhm	20 V	-55 °C	150 °C	12.4 nC	MOSFET (Metal Oxide)	N-Channel	60 W	PG-TO252-2
INFINEON IPAN65R650CEXKSA1	10.1 A	TO-220-3 Full Pack	Through Hole	440 pF	10 V	650 V	3.5 V	650 mOhm	20 V	-40 °C	150 °C	23 nC	MOSFET (Metal Oxide)	N-Channel	28 W	PG-TO220-FP
INFINEON IPA50R380CE	9.9 A	TO-220-3 Full Pack	Through Hole	584 pF	13 V	500 V	3.5 V	380 mOhm	20 V	-55 °C	150 °C	24.8 nC	MOSFET (Metal Oxide)	N-Channel	29.2 W	PG-TO220-FP
INFINEON IPI60R199CPXKSA2	16 A	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	1520 pF	10 V	600 V	3.5 V	199 mOhm	20 V	-55 °C	150 °C	43 nC	MOSFET (Metal Oxide)	N-Channel	139 W	PG-TO262-3-1
INFINEON IPB60R600CP	6.1 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	550 pF	10 V	600 V	3.5 V	600 mOhm	20 V	-55 °C	150 °C	27 nC	MOSFET (Metal Oxide)	N-Channel	60 W	PG-TO263-3-2
INFINEON IPW50R250CPFKSA1	13 A	TO-247-3	Through Hole	1420 pF	10 V	500 V	3.5 V	250 mOhm	20 V	-55 °C	150 °C	36 nC 36 nC	MOSFET (Metal Oxide)	N-Channel	114 W	PG-TO247-3-1
INFINEON IPD65R400CEAUMA1	15.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	710 pF	10 V	650 V	3.5 V	400 mOhm	20 V	-55 °C	150 °C	39 nC	MOSFET (Metal Oxide)	N-Channel	118 W	PG-TO252-3