DMP1100UCB4-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMP1100UCB4-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP1100UCB4-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.3 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 14 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 820 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | WLBGA, 4-XFBGA |
| Power Dissipation (Max) [Max] | 670 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 83 mOhm |
| Supplier Device Package | X2-WLB0808-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 800 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.66 | |
| 10 | $ 0.41 | |||
| 100 | $ 0.26 | |||
| 500 | $ 0.20 | |||
| 1000 | $ 0.18 | |||
| Digi-Reel® | 1 | $ 0.66 | ||
| 10 | $ 0.41 | |||
| 100 | $ 0.26 | |||
| 500 | $ 0.20 | |||
| 1000 | $ 0.18 | |||
| Tape & Reel (TR) | 3000 | $ 0.15 | ||
| 6000 | $ 0.14 | |||
| 9000 | $ 0.13 | |||
| 15000 | $ 0.12 | |||
| 21000 | $ 0.12 | |||
| 30000 | $ 0.12 | |||
| 75000 | $ 0.11 | |||
Description
General part information
DMP1100UCB4 Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in an ultra-small 0.8mmx0.8mm package.
Documents
Technical documentation and resources