DMP1100UCB4 Series

P-Channel Enhancement Mode MOSFET

Catalog

P-Channel Enhancement Mode MOSFET

Part	Grade	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max) [Max]
Diodes Inc DMP1100UCB4-7	Automotive	800 mV	8 V	MOSFET (Metal Oxide)	820 pF	83 mOhm	14 nC	AEC-Q101	12 V	4-XFBGA WLBGA	P-Channel	-55 °C	150 °C	2.5 A	X2-WLB0808-4	1.3 V 4.5 V	Surface Mount	670 mW

Catalog

P-Channel Enhancement Mode MOSFET

Key Features

• Built-In G-S Protection Diode Against ESD 2kV HBM.

• Ultra-Small 0.8mm x 0.8mm Package

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in an ultra-small 0.8mmx0.8mm package.