SSM6J502NU,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A 6UDFNB

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A 6UDFNB

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J502NU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	23.1 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Technology
Toshiba Semiconductor and Storage SSM6J502NU,LF	23.1 mOhm	24.8 nC	1.5 V 4.5 V	8 V	1800 pF	Surface Mount	6 A	1 V	1 W	150 °C	20 V	6-UDFNB (2x2)	P-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 6A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources