Specification	SSM6J502NU,LF

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	24.8 nC
Input Capacitance (Ciss) (Max)	1800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-WDFN Exposed Pad
Package Length	2 mm
Package Name	6-UDFNB
Package Width	2 mm
Power Dissipation (Max)	1 W
Rds On (Max)	23.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SSM6J502NU Series

Part	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Vgs (Max)	Technology	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package / Case	Mounting Type	Package Name	Package Length	Package Width
Toshiba Semiconductor and Storage SSM6J502NU,LF	24.8 nC	4.5 V	1.5 V	6 A	150 °C	20 V	1 W	P-Channel	8 V	MOSFET (Metal Oxide)	1 V	1800 pF	23.1 mOhm	6-WDFN Exposed Pad	Surface Mount	6-UDFNB	2 mm	2 mm

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