MOSFET P-CH 20V 6A 6UDFNB
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Operating Temperature | Drain to Source Voltage (Vdss) | Supplier Device Package | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 23.1 mOhm | 24.8 nC | 1.5 V 4.5 V | 8 V | 1800 pF | Surface Mount | 6 A | 1 V | 1 W | 150 °C | 20 V | 6-UDFNB (2x2) | P-Channel | MOSFET (Metal Oxide) |