Zenode.ai Logo
HMC408LP3ETR
RF and Wireless

HMC408LP3ETR

Obsolete
Analog Devices Inc./Maxim Integrated

1 WATT POWER AMPLIFIER SMT, 5.1 - 5.9 GHZ

HMC408LP3ETR
RF and Wireless

HMC408LP3ETR

Obsolete
Analog Devices Inc./Maxim Integrated

1 WATT POWER AMPLIFIER SMT, 5.1 - 5.9 GHZ

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC408LP3ETR
Current - Supply750 mA
Frequency (Max)5.9 GHz
Frequency (Min)5.1 GHz
Gain20 dB
Mounting TypeSurface Mount
Noise Figure6 dB
P1dB30 dBm
Package / Case16-VFQFN Exposed Pad
Package Length3 mm
Package Name16-QFN
Package Width3 mm
RF TypeUNII, HiperLAN
Test Frequency5.8 GHz
Voltage - Supply5 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated

CAD

3D models and CAD resources for this part

Description

General part information

HMC408 Series

The HMC408LP3(E) is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.Applications802.11a & HiperLAN WLANUNII & Pt-to-Pt / Multi-Point RadiosAccess Point Radios

Documents

Technical documentation and resources