HMC408LP3E
ObsoleteRF AMPLIFIER, 5.1 GHZ TO 5.9 GHZ, 5.25 V SUPPLY, QFN-EP-16, -40 °C TO 85 °C
HMC408LP3E
ObsoleteRF AMPLIFIER, 5.1 GHZ TO 5.9 GHZ, 5.25 V SUPPLY, QFN-EP-16, -40 °C TO 85 °C
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC408LP3E |
|---|---|
| Current - Supply | 750 mA |
| Frequency (Max) | 5.9 GHz |
| Frequency (Min) | 5.1 GHz |
| Gain | 20 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 6 dB |
| P1dB | 30 dBm |
| Package / Case | 16-VFQFN Exposed Pad |
| Package Length | 3 mm |
| Package Name | 16-QFN |
| Package Width | 3 mm |
| RF Type | UNII, HiperLAN |
| Test Frequency | 5.8 GHz |
| Voltage - Supply | 5 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Newark | Each | 1 | $ 16.10 | 30d+ |
| 10 | $ 14.02 | |||
| 25 | $ 13.29 | |||
| 50 | $ 12.79 | |||
| 100 | $ 12.30 | |||
| 250 | $ 11.70 | |||
| 500 | $ 11.28 | |||
CAD
3D models and CAD resources for this part
Description
General part information
HMC408 Series
The HMC408LP3(E) is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.Applications802.11a & HiperLAN WLANUNII & Pt-to-Pt / Multi-Point RadiosAccess Point Radios
Documents
Technical documentation and resources
