IRS21814STRPBF

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THE IRS21814S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SEPARATE PIN FOR LOGIC GROUND (14 LEAD SOIC PACKAGE)

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IRS21814STRPBF

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INFINEON

THE IRS21814S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SEPARATE PIN FOR LOGIC GROUND (14 LEAD SOIC PACKAGE)

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRS21814 Series

EiceDRIVER™ 600 Vhigh and low sidegate driver ICwith typical 1.9 A source and 2.3 A sink currents in 14 Lead SOIC package forIGBTsandMOSFETs. Also available in 14 Lead PDIP, 14 Lead MLPQ 4x4, 8 Lead SOIC, and 8 Lead PDIP. For the new version with ourSOI technologywe recommend2ED21814S06J, providing integrated bootstrap diode, better robustness and higher switching frequency

Technical Specifications

Parameters and characteristics for this part

Specification	IRS21814STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	2.3 A
Current - Peak Output (Source)	1.9 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	20 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	14-SOIC
Package Width	3.9 mm
Rise Time (Typ)	40 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS21814 Series

Part	Mounting Type	Package Width	Package Name	Package Length	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Number of Drivers	Logic Voltage - VIL	Logic Voltage - VIH	Rise Time (Typ)	Fall Time (Typ)	Gate Channel	Gate Type	Channel Type	High Side Voltage - Max (Bootstrap)	Driven Configuration	Input Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Operating Temperature (Min)	Operating Temperature (Max)	Package Leads
INFINEON IRS21814STRPBF	Surface Mount	3.9 mm	14-SOIC	0.154 in	10 VDC	20 V	2	0.8 V	2.5 V	40 ns	20 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	600 V	Half-Bridge	Non-Inverting	1.9 A	2.3 A	-40 °C	150 °C
INFINEON IRS21814PBF	Through Hole	7.62 mm	14-DIP	0.3 in	10 VDC	20 V	2	0.8 V	2.5 V	40 ns	20 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	600 V	Half-Bridge	Non-Inverting	1.9 A	2.3 A	-40 °C	150 °C
INFINEON IRS21814MTRPBF	Surface Mount	4 mm	16-MLPQ 16-VFQFN Exposed Pad	4 mm	10 VDC	20 V	2	0.8 V	2.5 V	40 ns	20 ns	N-Channel	MOSFET N-Channel MOSFET	Independent	600 V	Half-Bridge	Non-Inverting	1.9 A	2.3 A	-40 °C	150 °C	14 Leads
INFINEON IRS21814SPBF	Surface Mount	3.9 mm	14-SOIC	0.154 in	10 VDC	20 V	2	0.8 V	2.5 V	40 ns	20 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	600 V	Half-Bridge	Non-Inverting	1.9 A	2.3 A	-40 °C	150 °C

Pricing

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