IRS21814MTRPBF

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EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 1.9 A SOURCE AND 2.3 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT MLPQ 4X4 14L PACKAGE AND WORKS WITH IGBTS AND MOSFETS.

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IRS21814MTRPBF

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRS21814 Series

600 V High and Low Side Driver IC with typical 1.9 A source and 2.3 A sink currents in MLPQ 4X4 14L package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP. For the new version with ourSOI technologywe recommend2ED21814S06J, providing integrated bootstrap diode, better robustness and higher switching frequency

Technical Specifications

Parameters and characteristics for this part

Specification	IRS21814MTRPBF

Channel Type	Independent
Current - Peak Output (Sink)	2.3 A
Current - Peak Output (Source)	1.9 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	20 ns
Gate Channel	N-Channel
Gate Type	MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Leads	14 Leads
Package Length	4 mm
Package Name	16-MLPQ, 16-VFQFN Exposed Pad
Package Width	4 mm
Rise Time (Typ)	40 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS21814 Series

Part	Mounting Type	Package Width	Package Name	Package Length	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Number of Drivers	Logic Voltage - VIL	Logic Voltage - VIH	Rise Time (Typ)	Fall Time (Typ)	Gate Channel	Gate Type	Channel Type	High Side Voltage - Max (Bootstrap)	Driven Configuration	Input Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Operating Temperature (Min)	Operating Temperature (Max)	Package Leads
INFINEON IRS21814STRPBF	Surface Mount	3.9 mm	14-SOIC	0.154 in	10 VDC	20 V	2	0.8 V	2.5 V	40 ns	20 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	600 V	Half-Bridge	Non-Inverting	1.9 A	2.3 A	-40 °C	150 °C
INFINEON IRS21814PBF	Through Hole	7.62 mm	14-DIP	0.3 in	10 VDC	20 V	2	0.8 V	2.5 V	40 ns	20 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	600 V	Half-Bridge	Non-Inverting	1.9 A	2.3 A	-40 °C	150 °C
INFINEON IRS21814MTRPBF	Surface Mount	4 mm	16-MLPQ 16-VFQFN Exposed Pad	4 mm	10 VDC	20 V	2	0.8 V	2.5 V	40 ns	20 ns	N-Channel	MOSFET N-Channel MOSFET	Independent	600 V	Half-Bridge	Non-Inverting	1.9 A	2.3 A	-40 °C	150 °C	14 Leads
INFINEON IRS21814SPBF	Surface Mount	3.9 mm	14-SOIC	0.154 in	10 VDC	20 V	2	0.8 V	2.5 V	40 ns	20 ns	N-Channel	IGBT MOSFET N-Channel MOSFET	Independent	600 V	Half-Bridge	Non-Inverting	1.9 A	2.3 A	-40 °C	150 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Gate driver IC MOSFET - EiceDRIVER™ and CoolMOS™ CFD2 Join for High Efficiency in Refrigeration - Bodos Power

Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs

Data Sheet - IRS21814M

IRS21814MTRPBF | Datasheet