PBSS4160PAN,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR
PBSS4160PAN,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR
Description
General part information
PBSS4160PAN Series
NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4160PAN,115 |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 150 |
| Frequency - Transition | 175 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| NPN Count | 2 |
| Operating Temperature | 150 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Package Length | 2 mm |
| Package Name | 6-HUSON |
| Package Width | 2 mm |
| Power - Max | 510 mW |
| Qualification | AEC-Q100 |
| Transistor Configuration | Dual |
| Transistor Type | NPN |
| Vce Saturation (Max) | 120 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Nexperia package poster
Questions about package outline drawings
DFN2020-6; Reel pack for SMD, 7''; Q2/T3 product orientation
Reflow soldering profile
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4160PAN Nexperia Product Reliability
plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body
plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body