Catalog
60 V, 1 A NPN/NPN low VCEsat transistor
Description
AI
NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
60 V, 1 A NPN/NPN low VCEsat transistor
60 V, 1 A NPN/NPN low VCEsat transistor
| Part | Package Length | Package Name | Package Width | Grade | NPN Count | Transistor Type | Transistor Configuration | Vce Saturation (Max) | Voltage - Collector Emitter Breakdown (Max) | Operating Temperature | Current - Collector Cutoff (Max) | Power - Max | Frequency - Transition | Mounting Type | Current - Collector (Ic) (Max) | Package / Case | DC Current Gain (hFE) (Min) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 2 mm | 6-HUSON | 2 mm | Automotive | 2 | NPN | Dual | 120 mV | 60 V | 150 °C | 100 nA | 510 mW | 175 MHz | Surface Mount | 1 A | 6-UFDFN Exposed Pad | 150 | AEC-Q100 |