Specification	SSM6K810R,LXHF

Current - Continuous Drain (Id) (Ta)	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	3.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	430 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	Flat Leads, 6-SMD
Package Name	6-TSOP-F
Power Dissipation (Max)	1.5 W
Qualification	AEC-Q101
Rds On (Max)	69 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SSM6K810R Series

Part	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	FET Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Package / Case	Vgs (Max)	Technology	Mounting Type	Vgs(th) (Max)	Qualification	Grade
Toshiba Semiconductor and Storage SSM6K810R,LF	6-TSOP-F	10 V	4.5 V	175 °C	430 pF	1.5 W	N-Channel	69 mOhm	100 V	3.2 nC	3.5 A	6-SMD Flat Leads	20 V	MOSFET (Metal Oxide)	Surface Mount	2.5 V
Toshiba Semiconductor and Storage SSM6K810R,LXHF	6-TSOP-F	10 V	4.5 V	175 °C	430 pF	1.5 W	N-Channel	69 mOhm	100 V	3.2 nC	3.5 A	6-SMD Flat Leads	20 V	MOSFET (Metal Oxide)	Surface Mount	2.5 V	AEC-Q101	Automotive

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