SSM6K810R,LF

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Toshiba Semiconductor and Storage

SMALL SIGNAL MOSFET N-CH VDSS=10

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Toshiba Semiconductor and Storage

SMALL SIGNAL MOSFET N-CH VDSS=10

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K810R,LF

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	69 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM6K810R,LF	6-SMD Flat Leads	20 V	6-TSOP-F	430 pF	3.2 nC	1.5 W	MOSFET (Metal Oxide)	3.5 A	4.5 V 10 V	Surface Mount	100 V	175 °C	N-Channel	2.5 V	69 mOhm

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General part information

N-Channel 100 V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F

Technical documentation and resources

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