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SOT23

BSS138P,215

Active
Nexperia USA Inc.

60 V, 360 MA N-CHANNEL TRENCH MOSFET

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SOT23

BSS138P,215

Active
Nexperia USA Inc.

60 V, 360 MA N-CHANNEL TRENCH MOSFET

Find alt

Description

General part information

BSS138 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS138P,215
Current - Continuous Drain (Id) (Ta)360 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)0.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)50 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power Dissipation (Max)1.14 W, 350 mW
QualificationAEC-Q101
Rds On (Max)1.6 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1.5 V

Pricing

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CAD

3D models and CAD resources for this part