
BSS138P,215
ActiveNexperia USA Inc.
60 V, 360 MA N-CHANNEL TRENCH MOSFET

BSS138P,215
ActiveNexperia USA Inc.
60 V, 360 MA N-CHANNEL TRENCH MOSFET
Description
General part information
BSS138 Series
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSS138P,215 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 360 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 0.8 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 1.14 W, 350 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.6 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Understanding power MOSFET data sheet parameters
RC Thermal Models
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Using power MOSFETs in parallel
Reflow soldering profile
Power MOSFET frequently asked questions and answers
Failure signature of Electrical Overstress on Power MOSFETs
Nexperia package poster
Understanding power MOSFET data sheet parameters
LFPAK MOSFET thermal design guide, Chinese version
Questions about package outline drawings
LFPAK MOSFET thermal design guide - Part 2
Wave soldering profile
Reel pack for SMD, 7"; Q3/T4 product orientation
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Power MOSFET single-shot and repetitive avalanche ruggedness rating