
BSS138AKAR
ActiveNexperia USA Inc.
60 V, SINGLE N-CHANNEL TRENCH MOSFET

BSS138AKAR
ActiveNexperia USA Inc.
60 V, SINGLE N-CHANNEL TRENCH MOSFET
Description
General part information
BSS138 Series
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSS138AKAR |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 200 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 0.51 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 47 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 1.06 W, 300 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Using power MOSFETs in parallel
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Nexperia package poster
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
LFPAK MOSFET thermal design guide - Part 2
RC Thermal Models
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Power MOSFET frequently asked questions and answers
LFPAK MOSFET thermal design guide, Chinese version
Questions about package outline drawings
Reflow soldering profile
Reel pack for SMD, 7"; Q3/T4 product orientation
Wave soldering profile