2N6661-E3

Obsolete

Vishay Siliconix

MOSFET N-CH 90V 860MA TO39

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Obsolete

Vishay Siliconix

MOSFET N-CH 90V 860MA TO39

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2N6661-E3	2N6661 Series

Current - Continuous Drain (Id) @ 25°C	860 mA	860 mA
Drain to Source Voltage (Vdss)	90 V	90 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V	5 V
FET Type	N-Channel	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	50 pF	50 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-39-3 Metal Can, TO-205AD	TO-39-3 Metal Can, TO-205AD
Power Dissipation (Max)	6.25 W, 725 mW	6.25 - 725 W
Rds On (Max) @ Id, Vgs	4 Ohm	4 Ohm
Supplier Device Package	TO-39	TO-39
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	2 V	2 V

MOSFET N-CH 90V 860MA TO39

Part	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C
Vishay Siliconix 2N6661JTXP02	4 Ohm	N-Channel	TO-39	50 pF	-55 °C	150 °C	90 V	Through Hole	TO-205AD, TO-39-3 Metal Can	20 V	2 V	6.25 W, 725 mW	MOSFET (Metal Oxide)	10 V	5 V	860 mA
Vishay Siliconix 2N6661-2	4 Ohm	N-Channel	TO-39	50 pF	-55 °C	150 °C	90 V	Through Hole	TO-205AD, TO-39-3 Metal Can	20 V	2 V	6.25 W, 725 mW	MOSFET (Metal Oxide)	10 V	5 V	860 mA
Vishay Siliconix 2N6661	4 Ohm	N-Channel	TO-39	50 pF	-55 °C	150 °C	90 V	Through Hole	TO-205AD, TO-39-3 Metal Can	20 V	2 V	6.25 W, 725 mW	MOSFET (Metal Oxide)	10 V	5 V	860 mA
Vishay Siliconix 2N6661-E3	4 Ohm	N-Channel	TO-39	50 pF	-55 °C	150 °C	90 V	Through Hole	TO-205AD, TO-39-3 Metal Can	20 V	2 V	6.25 W, 725 mW	MOSFET (Metal Oxide)	10 V	5 V	860 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

Technical documentation and resources