MOSFET N-CH 90V 860MA TO39
| Part | Rds On (Max) @ Id, Vgs | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Vgs (Max) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix 2N6661JTXP02 | 4 Ohm | N-Channel | TO-39 | 50 pF | -55 °C | 150 °C | 90 V | Through Hole | TO-205AD, TO-39-3 Metal Can | 20 V | 2 V | 6.25 W, 725 mW | MOSFET (Metal Oxide) | 10 V | 5 V | 860 mA |
Vishay Siliconix 2N6661-2 | 4 Ohm | N-Channel | TO-39 | 50 pF | -55 °C | 150 °C | 90 V | Through Hole | TO-205AD, TO-39-3 Metal Can | 20 V | 2 V | 6.25 W, 725 mW | MOSFET (Metal Oxide) | 10 V | 5 V | 860 mA |
Vishay Siliconix 2N6661 | 4 Ohm | N-Channel | TO-39 | 50 pF | -55 °C | 150 °C | 90 V | Through Hole | TO-205AD, TO-39-3 Metal Can | 20 V | 2 V | 6.25 W, 725 mW | MOSFET (Metal Oxide) | 10 V | 5 V | 860 mA |
Vishay Siliconix 2N6661-E3 | 4 Ohm | N-Channel | TO-39 | 50 pF | -55 °C | 150 °C | 90 V | Through Hole | TO-205AD, TO-39-3 Metal Can | 20 V | 2 V | 6.25 W, 725 mW | MOSFET (Metal Oxide) | 10 V | 5 V | 860 mA |