FF2MR12KM1HPHPSA1

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INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 350 A, 1.2 KV, 0.00196 OHM, MODULE

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FF2MR12KM1HPHPSA1

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INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 350 A, 1.2 KV, 0.00196 OHM, MODULE

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Description Specifications Series Pricing CAD Documents

Description

General part information

M1H Series

62 mmCoolSiC™ MOSFEThalf bridge module 1200 V, 2.1 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-appliedThermal Interface Material(TIM).

Technical Specifications

Parameters and characteristics for this part

Specification	FF2MR12KM1HPHPSA1

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Tc)	500 A, 420 A
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	1340 nC
Input Capacitance (Ciss) (Max)	39700 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C, 150 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Package Name	AG-62MMHB
Rds On (Max)	2.13 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	5.15 V, 5.15 V

M1H Series

Part	Input Capacitance (Ciss) (Max)	FET Type	Rds On (Max)	Gate Charge (Max)	Vgs(th) (Max)	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tj)	Operating Temperature (Max)	Operating Temperature (Min)	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive	Configuration	Channel Count	Current - Continuous Drain (Id)	Package Name	Power - Max	Current - Continuous Drain (Id) (Tc)	Configuration - Features
INFINEON DF17MR12W1M1HFB68BPSA1	4400 pF	N-Channel	16.2 mOhm	149 nC 149 nC	5.15 V	SiCFET (Silicon Carbide)	Chassis Mount	1200 V	18 V	15 V	45 A	175 °C	-40 °C	Module	-7 V	20 V
INFINEON FS28MR12W1M1HB11HPSA1	2700 pF		26.4 mOhm	90 nC	5.15 V	Silicon Carbide (SiC)	Chassis Mount	1200 V				175 °C	-40 °C	Module			N-Channel	6	30 A	AG-EASY1B	20 mW
INFINEON FF17MR12W1M1HB11BPSA1						Silicon Carbide (SiC)	Chassis Mount	1200 V						Module						AG-EASY1B
INFINEON FF2MR12KM1HPHPSA1	39700 pF		2.13 mOhm	1340 nC	5.15 V 5.15 V	Silicon Carbide (SiC)	Chassis Mount	1200 V				150 °C 175 °C	-40 °C	Module			N-Channel	2		AG-62MMHB		420 A 500 A	Half Bridge

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

CoolSiC™ MOSFET M1H for 1200 V and 2000 V modules

62mm SiC with TIM

FF2MR12KM1HP

FF2MR12KM1HPHPSA1 | Datasheet