Specification	DF17MR12W1M1HFB68BPSA1

Current - Continuous Drain (Id) (Tj)	45 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	149 nC, 149 nC
Input Capacitance (Ciss) (Max)	4400 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Rds On (Max)	16.2 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-7 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	5.15 V

M1H Series

Part	Input Capacitance (Ciss) (Max)	FET Type	Rds On (Max)	Gate Charge (Max)	Vgs(th) (Max)	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tj)	Operating Temperature (Max)	Operating Temperature (Min)	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive	Configuration	Channel Count	Current - Continuous Drain (Id)	Package Name	Power - Max	Current - Continuous Drain (Id) (Tc)	Configuration - Features
INFINEON DF17MR12W1M1HFB68BPSA1	4400 pF	N-Channel	16.2 mOhm	149 nC 149 nC	5.15 V	SiCFET (Silicon Carbide)	Chassis Mount	1200 V	18 V	15 V	45 A	175 °C	-40 °C	Module	-7 V	20 V
INFINEON FS28MR12W1M1HB11HPSA1	2700 pF		26.4 mOhm	90 nC	5.15 V	Silicon Carbide (SiC)	Chassis Mount	1200 V				175 °C	-40 °C	Module			N-Channel	6	30 A	AG-EASY1B	20 mW
INFINEON FF17MR12W1M1HB11BPSA1						Silicon Carbide (SiC)	Chassis Mount	1200 V						Module						AG-EASY1B
INFINEON FF2MR12KM1HPHPSA1	39700 pF		2.13 mOhm	1340 nC	5.15 V 5.15 V	Silicon Carbide (SiC)	Chassis Mount	1200 V				150 °C 175 °C	-40 °C	Module			N-Channel	2		AG-62MMHB		420 A 500 A	Half Bridge

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