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DMP3099L-7 - SOT-23-3

DMP3099L-7

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3099L-7 - SOT-23-3

DMP3099L-7

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3099L-7
Current - Continuous Drain (Id) @ 25°C3.8 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs5.2 nC
Input Capacitance (Ciss) (Max) @ Vds563 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.08 W
Rds On (Max) @ Id, Vgs65 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.33
10$ 0.23
100$ 0.12
500$ 0.10
1000$ 0.07
Digi-Reel® 1$ 0.33
10$ 0.23
100$ 0.12
500$ 0.10
1000$ 0.07
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06
9000$ 0.05
30000$ 0.05
75000$ 0.04
150000$ 0.04

Description

General part information

DMP3099LQ Series

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.