DMP3099LQ Series

P-Channel Enhancement Mode MOSFET

Catalog

P-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Qualification	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Grade	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Diodes Inc DMP3099LQ-13	2.1 V	SC-59 SOT-23-3 TO-236-3	30 V	-55 °C	150 °C	1.08 W	Surface Mount	SOT-23-3	563 pF	65 mOhm	11 nC	3.8 A	AEC-Q101	20 V	P-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	Automotive
Diodes Inc DMP3099L-13	2.1 V	SC-59 SOT-23-3 TO-236-3	30 V	-55 °C	150 °C		Surface Mount	SOT-23-3	563 pF	65 mOhm		3.8 A		20 V	P-Channel	4.5 V 10 V	MOSFET (Metal Oxide)		5.2 nC	1.08 W
Diodes Inc DMP3099L-7	2.1 V	SC-59 SOT-23-3 TO-236-3	30 V	-55 °C	150 °C		Surface Mount	SOT-23-3	563 pF	65 mOhm		3.8 A		20 V	P-Channel	4.5 V 10 V	MOSFET (Metal Oxide)		5.2 nC	1.08 W

Catalog

P-Channel Enhancement Mode MOSFET

Key Features

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under a separate datasheet (DMP3099LQ)

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.