SPP07N60CFDHKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 6.6A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 6.6A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP07N60CFDHKSA1

Current - Continuous Drain (Id) @ 25°C	6.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id
Infineon Technologies SPP07N60CFDHKSA1	700 mOhm	10 V	N-Channel	TO-220-3	-55 °C	150 °C	83 W	Through Hole	20 V	790 pF	650 V	PG-TO220-3-1	6.6 A	MOSFET (Metal Oxide)
Infineon Technologies SPP07N60C3HKSA1		10 V	N-Channel	TO-220-3	-55 °C	150 °C	83 W	Through Hole	20 V	790 pF	650 V	PG-TO220-3	7.3 A	MOSFET (Metal Oxide)	27 nC	600 mOhm	3.9 V
Infineon Technologies SPP07N65C3XKSA1		10 V	N-Channel	TO-220-3	-55 °C	150 °C	83 W	Through Hole	20 V	790 pF	650 V	PG-TO220-3-1	7.3 A	MOSFET (Metal Oxide)	27 nC	600 mOhm	3.9 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 6.6A (Tc) 83W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources