MOSFET N-CH 650V 6.6A TO220-3
| Part | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 700 mOhm | 10 V | N-Channel | TO-220-3 | -55 °C | 150 °C | 83 W | Through Hole | 20 V | 790 pF | 650 V | PG-TO220-3-1 | 6.6 A | MOSFET (Metal Oxide) | |||
Infineon Technologies | 10 V | N-Channel | TO-220-3 | -55 °C | 150 °C | 83 W | Through Hole | 20 V | 790 pF | 650 V | PG-TO220-3 | 7.3 A | MOSFET (Metal Oxide) | 27 nC | 600 mOhm | 3.9 V | |
Infineon Technologies | 10 V | N-Channel | TO-220-3 | -55 °C | 150 °C | 83 W | Through Hole | 20 V | 790 pF | 650 V | PG-TO220-3-1 | 7.3 A | MOSFET (Metal Oxide) | 27 nC | 600 mOhm | 3.9 V |