Description
General part information
2ED2106 Series
650 Vhigh and low sidehigh speed powerMOSFETandIGBTgate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package for bigger creepage is also available:2ED21064S06J. Based on ourSOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED2106S06FXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 700 mA |
| Current - Peak Output (Source) | 290 mA |
| Driven Configuration | High-Side, Low-Side |
| Fall Time (Typ) | 35 ns |
| Gate Channel | N-Channel |
| Gate Type | IGBT, MOSFET, N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) | 675 V, 650 V |
| Input Type | CMOS, TTL |
| Logic Voltage - VIH | 1.7 V |
| Logic Voltage - VIL | 1.1 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC, PG-DSO-8-69 |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 100 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 10 VDC |
Pricing
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