2ED2106 Series
Manufacturer: INFINEON
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THE 2ED2106S06F IS A 650 V 0.7 A HIGH AND LOW SIDE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER (DSO-8 PACKAGE)
| Part | Gate Channel | Gate Type | Package Length | Package Name | Package Width | Operating Temperature (Max) | Operating Temperature (Min) | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Rise Time (Typ) | Fall Time (Typ) | Logic Voltage - VIL | Logic Voltage - VIH | Channel Type | Driven Configuration | Input Type | Current - Peak Output (Sink) | Current - Peak Output (Source) | Number of Drivers | Mounting Type | High Side Voltage - Max (Bootstrap) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | N-Channel | IGBT MOSFET N-Channel MOSFET | 0.154 in | 8-SOIC PG-DSO-8-69 | 3.9 mm | 125 °C | -40 °C | 10 VDC | 20 V | 100 ns | 35 ns | 1.1 V | 1.7 V | Independent | High-Side Low-Side | CMOS TTL | 700 mA | 290 mA | 2 | Surface Mount | 650 V 675 V |