Specification	SISA66DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	66 nC, 66 nC
Input Capacitance (Ciss) (Max)	3014 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W
Rds On (Max)	2.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.2 V

SISA Series

Part	Gate Charge (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	FET Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package Name	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)
Vishay Dale SISA12ADN-T1-GE3	45 nC	2.2 V	3.5 W 28 W	MOSFET (Metal Oxide)	-55 °C	150 °C	2070 pF	Surface Mount	-16 V	20 V	N-Channel	25 A 25 A	4.3 mOhm	PowerPAK® 1212-8	PowerPAK® 1212-8	10 V	4.5 V	30 V
Vishay Dale SISA10DN-T1-GE3	51 nC	2.2 V	3.6 W 39 W	MOSFET (Metal Oxide)	-55 °C	150 °C	2425 pF	Surface Mount	-16 V	20 V	N-Channel	30 A	3.7 mOhm	PowerPAK® 1212-8	PowerPAK® 1212-8	10 V	4.5 V	30 V
Vishay Dale SISA66DN-T1-GE3	66 nC 66 nC	2.2 V	52 W	MOSFET (Metal Oxide)	-55 °C	150 °C	3014 pF	Surface Mount	-16 V	20 V	N-Channel	40 A	2.3 mOhm	PowerPAK® 1212-8	PowerPAK® 1212-8	10 V	4.5 V	30 V

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