SISA Series

Catalog

MOSFETS FOR NEW DESIGN SEE: 78-SISHA12ADN-T1-GE3

Part	Gate Charge (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	FET Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package Name	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)
Vishay Dale SISA12ADN-T1-GE3	45 nC	2.2 V	3.5 W 28 W	MOSFET (Metal Oxide)	-55 °C	150 °C	2070 pF	Surface Mount	-16 V	20 V	N-Channel	25 A 25 A	4.3 mOhm	PowerPAK® 1212-8	PowerPAK® 1212-8	10 V	4.5 V	30 V
Vishay Dale SISA10DN-T1-GE3	51 nC	2.2 V	3.6 W 39 W	MOSFET (Metal Oxide)	-55 °C	150 °C	2425 pF	Surface Mount	-16 V	20 V	N-Channel	30 A	3.7 mOhm	PowerPAK® 1212-8	PowerPAK® 1212-8	10 V	4.5 V	30 V
Vishay Dale SISA66DN-T1-GE3	66 nC 66 nC	2.2 V	52 W	MOSFET (Metal Oxide)	-55 °C	150 °C	3014 pF	Surface Mount	-16 V	20 V	N-Channel	40 A	2.3 mOhm	PowerPAK® 1212-8	PowerPAK® 1212-8	10 V	4.5 V	30 V