IRF2807STRLPBF

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Infineon Technologies

MOSFET, N-CH, 75V, 82A, TO-263-3

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Infineon Technologies

MOSFET, N-CH, 75V, 82A, TO-263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRF2807STRLPBF

Current - Continuous Drain (Id) @ 25°C	82 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	3820 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Package / Case
Infineon Technologies IRF2807STRLPBF	N-Channel	-55 °C	175 ░C	13 mOhm	3820 pF	82 A	D2PAK	160 nC	75 V	MOSFET (Metal Oxide)	10 V	20 V	230 W	Surface Mount	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies IRF2807STRRPBF	N-Channel	-55 °C	175 ░C	13 mOhm	3820 pF	82 A	D2PAK	160 nC	75 V	MOSFET (Metal Oxide)	10 V	20 V	230 W	Surface Mount	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies IRF2807PBF	N-Channel	-55 °C	175 ░C	13 mOhm	3820 pF	82 A	TO-220AB	160 nC	75 V	MOSFET (Metal Oxide)	10 V	20 V	230 W	Through Hole	4 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 82A (Tc) 230W (Tc) Surface Mount D2PAK

Technical documentation and resources