MOSFET, N-CH, 75V, 82A, TO-263-3
| Part | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) [Max] | Mounting Type | Vgs(th) (Max) @ Id | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | -55 °C | 175 ░C | 13 mOhm | 3820 pF | 82 A | D2PAK | 160 nC | 75 V | MOSFET (Metal Oxide) | 10 V | 20 V | 230 W | Surface Mount | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |
Infineon Technologies | N-Channel | -55 °C | 175 ░C | 13 mOhm | 3820 pF | 82 A | D2PAK | 160 nC | 75 V | MOSFET (Metal Oxide) | 10 V | 20 V | 230 W | Surface Mount | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |
Infineon Technologies | N-Channel | -55 °C | 175 ░C | 13 mOhm | 3820 pF | 82 A | TO-220AB | 160 nC | 75 V | MOSFET (Metal Oxide) | 10 V | 20 V | 230 W | Through Hole | 4 V | TO-220-3 |