IKW50N65RH5XKSA1

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INFINEON

THE IKW50N65RH5 IS A 650 V, 50 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

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IKW50N65RH5XKSA1

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INFINEON

THE IKW50N65RH5 IS A 650 V, 50 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IKW50N65 Series

650 V, 50 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switchingTRENCHSTOP™ 5 H5IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fastTRENCHSTOP™ 5 H5IGBT with half-ratedfreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discreteenables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.

Technical Specifications

Parameters and characteristics for this part

Specification	IKW50N65RH5XKSA1

Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	120 nC
IGBT Type	Trench Field Stop
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-247-3
Package Name	PG-TO247-3
Power - Max	305 W
Switching Energy (Off)	180 µJ
Switching Energy (On)	230 µJ
Td (off) @ 25°C	180 ns
Td (on) @ 25°C	22 ns
Test Condition Current	25 A
Test Condition Resistance	12 Ohm
Test Condition Voltage	400 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

IKW50N65 Series

Part	Reverse Recovery Time (trr)	Td (on) @ 25°C	Td (off) @ 25°C	Qualification	Package / Case	Test Condition Resistance	Test Condition Current	Test Condition Voltage	Test Condition Voltage (Secondary)	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Pulsed (Icm)	Operating Temperature (Max)	Operating Temperature (Min)	Switching Energy (On)	Switching Energy (Off)	Vce(on) (Max)	Current - Collector (Ic) (Max)	Package Name	Gate Charge	Power - Max	Input Type	Grade	IGBT Type
INFINEON IKW50N65ET7XKSA1	93 ns	26 ns	350 ns	AEC-Q101	TO-247-3	9 Ohm	50 A	400 V	15 V	650 V	Through Hole	150 A	175 °C	-40 °C	1.2 mJ	850 µJ	1.65 V	50 A	PG-TO247-3	290 nC	273 W	Standard	Automotive	Trench Field Stop
INFINEON IKW50N65H5FKSA1	57 ns	21 ns	180 ns		TO-247-3	12 Ohm	25 A	400 V	15 V	650 V	Through Hole	150 A	175 °C	-40 °C	520 µJ	180 µJ	2.1 V	80 A	PG-TO247-3	120 nC	305 W	Standard
INFINEON IKW50N65ES5XKSA1	70 ns	20 ns	127 ns		TO-247-3	8.2 Ohm	50 A	400 V	15 V	650 V	Through Hole	200 A	175 °C	-40 °C	1.23 mJ	550 µJ	1.7 V	80 A	PG-TO247-3	120 nC	274 W	Standard		Trench
INFINEON IKW50N65F5FKSA1	52 ns	21 ns	175 ns		TO-247-3	12 Ohm	25 A	400 V	15 V	650 V	Through Hole	150 A	175 °C	-40 °C	490 µJ	160 µJ	2.1 V	80 A	PG-TO247-3	120 nC	305 W	Standard
INFINEON IKW50N65SS5XKSA1		20 ns	140 ns		TO-247-3	9 Ohm	50 A	400 V	15 V	650 V	Through Hole	200 A	175 °C	-40 °C	320 µJ	550 µJ	1.7 V	80 A	PG-TO247-3	110 nC	274 W	Standard		Trench Field Stop
INFINEON IKW50N65RH5XKSA1		22 ns	180 ns		TO-247-3	12 Ohm	25 A	400 V	15 V	650 V	Through Hole	200 A	175 °C	-40 °C	230 µJ	180 µJ	2.1 V	80 A	PG-TO247-3	120 nC	305 W	Standard		Trench Field Stop

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

IKW50N65RH5XKSA1 | Datasheet

Optimizing layout for paralleling power discrete semiconductor devices

IKW50N65RH5