IKW50N65H5FKSA1

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650 V, 56 A TRENCHSTOP™ IGBT 5 WITH ANTI-PARALLEL DIODE IN TO247 HOUSING. WITH A SWITCHING FREQUENCY RANGE FROM 30 KHZ TO 100 KHZ IT PERFECTLY MATCHES APPLICATIONS LIKE MID-HIGH FREQUENCY CONVERTER, SOLAR CONVERTER, UNINTERRUPTIBLE POWER SUPPLY OR WELDING CONVERTER.

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IKW50N65H5FKSA1

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IKW50N65 Series

High Speed 650 V, 50 A hard-switching TRENCHSTOPTMIGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT.

Technical Specifications

Parameters and characteristics for this part

Specification	IKW50N65H5FKSA1

Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	120 nC
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-247-3
Package Name	PG-TO247-3
Power - Max	305 W
Reverse Recovery Time (trr)	57 ns
Switching Energy (Off)	180 µJ
Switching Energy (On)	520 µJ
Td (off) @ 25°C	180 ns
Td (on) @ 25°C	21 ns
Test Condition Current	25 A
Test Condition Resistance	12 Ohm
Test Condition Voltage	400 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

IKW50N65 Series

Part	Reverse Recovery Time (trr)	Td (on) @ 25°C	Td (off) @ 25°C	Qualification	Package / Case	Test Condition Resistance	Test Condition Current	Test Condition Voltage	Test Condition Voltage (Secondary)	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Pulsed (Icm)	Operating Temperature (Max)	Operating Temperature (Min)	Switching Energy (On)	Switching Energy (Off)	Vce(on) (Max)	Current - Collector (Ic) (Max)	Package Name	Gate Charge	Power - Max	Input Type	Grade	IGBT Type
INFINEON IKW50N65ET7XKSA1	93 ns	26 ns	350 ns	AEC-Q101	TO-247-3	9 Ohm	50 A	400 V	15 V	650 V	Through Hole	150 A	175 °C	-40 °C	1.2 mJ	850 µJ	1.65 V	50 A	PG-TO247-3	290 nC	273 W	Standard	Automotive	Trench Field Stop
INFINEON IKW50N65H5FKSA1	57 ns	21 ns	180 ns		TO-247-3	12 Ohm	25 A	400 V	15 V	650 V	Through Hole	150 A	175 °C	-40 °C	520 µJ	180 µJ	2.1 V	80 A	PG-TO247-3	120 nC	305 W	Standard
INFINEON IKW50N65ES5XKSA1	70 ns	20 ns	127 ns		TO-247-3	8.2 Ohm	50 A	400 V	15 V	650 V	Through Hole	200 A	175 °C	-40 °C	1.23 mJ	550 µJ	1.7 V	80 A	PG-TO247-3	120 nC	274 W	Standard		Trench
INFINEON IKW50N65F5FKSA1	52 ns	21 ns	175 ns		TO-247-3	12 Ohm	25 A	400 V	15 V	650 V	Through Hole	150 A	175 °C	-40 °C	490 µJ	160 µJ	2.1 V	80 A	PG-TO247-3	120 nC	305 W	Standard
INFINEON IKW50N65SS5XKSA1		20 ns	140 ns		TO-247-3	9 Ohm	50 A	400 V	15 V	650 V	Through Hole	200 A	175 °C	-40 °C	320 µJ	550 µJ	1.7 V	80 A	PG-TO247-3	110 nC	274 W	Standard		Trench Field Stop
INFINEON IKW50N65RH5XKSA1		22 ns	180 ns		TO-247-3	12 Ohm	25 A	400 V	15 V	650 V	Through Hole	200 A	175 °C	-40 °C	230 µJ	180 µJ	2.1 V	80 A	PG-TO247-3	120 nC	305 W	Standard		Trench Field Stop

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Optimizing layout for paralleling power discrete semiconductor devices

IKW50N65H5

Infineon-MA005618446-MaterialContentSheet-v01_00-EN

IKW50N65H5FKSA1 | Datasheet

Technical Data Sheet EN